2N3821
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MPN 2N3821Описание RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4PinБренд MicrosemiCase/Package TO-72Drain to Source Voltage (Vds) 50 VInput Capacitance (Ciss) 6pF @15V(Vds)Input Power (Max) 300 mWDatasheet 2N3821
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- Case/Package: TO-72
- Drain to Source Voltage (Vds): 50 V
- Input Capacitance (Ciss): 6pF @15V(Vds)
- Input Power (Max): 300 mW
- Lead-Free Status: Contains Lead
- Mounting Style: Through Hole
- Количество штифтов: 4
- Operating Temperature: -55℃ ~ 200℃ (TJ)
- Product Lifecycle Status: Not Recommended for New Designs
- Reverse Breakdown Voltage: 50 V
- RoHS: RoHS Compliant
RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4Pin
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