BD434
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MPN BD434Описание Trans GP BJT PNP 22V 4A 3Pin(3+Tab) SOT-32 TubeБренд ST MicroelectronicsBreakdown Voltage (Collector to Emitter) 22 VCase/Package TO-126-3DC Current Gain (hFE) 140hFE Min 40 @10mA, 5V
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- Breakdown Voltage (Collector to Emitter): 22 V
- Case/Package: TO-126-3
- DC Current Gain (hFE): 140
- hFE Min: 40 @10mA, 5V
- Input Power (Max): 36 W
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -65 ℃
- Упаковка: Tube
- Polarity: PNP
- Power Dissipation: 36 W
- Power Dissipation (Max): 36000 mW
- Product Lifecycle Status: Not Recommended for New Designs
- REACH SVHC Compliance: No SVHC
- REACH SVHC Compliance Edition: 2015/12/17
- RoHS: Compliant with Exemption
- Transistor Gender: PNP
Trans GP BJT PNP 22V 4A 3Pin(3+Tab) SOT-32 Tube
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