BPW77NA
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MPN BPW77NAОписание BPW77NA Series ±10° Sensitivity Through Hole NPN Silicon Phototransistor - TO-18Бренд VISHAYBreakdown Voltage (Collector to Emitter) 70 VCase/Package TO-206ECCN Code EAR99Fall Time 5 µsDatasheet BPW77NA
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- Breakdown Voltage (Collector to Emitter): 70 V
- Case/Package: TO-206
- ECCN Code: EAR99
- Fall Time: 5 µs
- Input Power (Max): 250 mW
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Number of Channels: 1
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature: -40℃ ~ 125℃
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -40 ℃
- Operating Voltage: 5.00 V
- Упаковка: Bulk
- Peak Wavelength: 850 nm
- Polarity: NPN
- Power Consumption: 250 mW
- Power Dissipation: 250 mW
- Power Dissipation (Max): 250 mW
- Power Rating: 0.25 W
- Product Lifecycle Status: Active
- Rise Time: 6 µs
- RoHS: RoHS Compliant
- Size-Height: 6.15 mm
- Transistor Gender: NPN
- Viewing Angle: 20°
- Voltage Rating (DC): 70.0 V
- Wavelength: 850 nm
BPW77NA Series ±10° Sensitivity Through Hole NPN Silicon Phototransistor - TO-18
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