BPW85B
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MPN BPW85BОписание VISHAY BPW85B Phototransistor, 850nm, 25°, 0.1W(1/10W), 2Pins, T-1 (3mm)Бренд Vishay SemiconductorRoHS RoHS CompliantLead-Free Status Lead FreeProduct Lifecycle Status ActiveУпаковка EachDatasheet BPW85B
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- RoHS: RoHS Compliant
- Lead-Free Status: Lead Free
- Product Lifecycle Status: Active
- Упаковка: Each
- Mounting Style: Through Hole
- Material: Silicon
- Size-Length: 3.4 mm
- Количество штифтов: 2
- Size-Width: 3.4 mm
- Size-Height: 4.5 mm
- Current Rating: 50.0 mA
- Case/Package: T-1
- Rise/Fall Time: 2.3 ns
- Number of Channels: 1
- Operating Temperature: -40℃ ~ 100℃
- Number of Positions: 2
- Wavelength: 850 nm
- Viewing Angle: 25°
- Peak Wavelength: 850 nm
- Polarity: NPN
- Power Dissipation: 100 mW
- Power Consumption: 100 mW
- Rise Time: 2 µs
- Breakdown Voltage (Collector to Emitter): 70 V
- ECCN Code: EAR99
- Input Power (Max): 100 mW
- Fall Time: 2.3 µs
- Operating Temperature (Max): 100 ℃
- Operating Temperature (Min): -40 ℃
- Power Dissipation (Max): 100 mW
- Transistor Gender: NPN
VISHAY BPW85B Phototransistor, 850nm, 25°, 0.1W(1/10W), 2Pins, T-1 (3mm)
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