BS170
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MPN BS170Описание Trans MOSFET N-CH 60V 0.5A 3Pin TO-92 BagБренд ON SemiconductorBreakdown Voltage (Drain to Source) 60 VBreakdown Voltage (Gate to Source) ±20.0 VCase/Package TO-226-3Continuous Drain Current (Ids) 500 mA
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- Breakdown Voltage (Drain to Source): 60 V
- Breakdown Voltage (Gate to Source): ±20.0 V
- Case/Package: TO-226-3
- Continuous Drain Current (Ids): 500 mA
- Current Rating: 500 mA
- Drain to Source Resistance (on) (Rds): 5 Ω
- Drain to Source Voltage (Vds): 60 V
- Input Capacitance: 60.0 pF
- Input Capacitance (Ciss): 60pF @10V(Vds)
- Input Power (Max): 830 mW
- Lead-Free Status: Contains Lead
- Mounting Style: Through Hole
- Number of Channels: 1
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature: -55℃ ~ 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Упаковка: Tube
- Polarity: N-Channel
- Power Dissipation: 350 mW
- Power Dissipation (Max): 350mW (Ta)
- Product Lifecycle Status: Obsolete
- RoHS: RoHS Compliant
- Size-Height: 5.33 mm
- Size-Length: 5.2 mm
- Size-Width: 4.19 mm
- Threshold Voltage: 2.1 V
- Transistor Gender: N Channel
- Voltage Rating (DC): 60.0 V
Trans MOSFET N-CH 60V 0.5A 3Pin TO-92 Bag
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