BSM10GD120DN2
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MPN BSM10GD120DN2Описание INFINEON BSM10GD120DN2 IGBT Array & Module Transistor, N Channel, 15A, 3.2V, 80W, 1.2kV, EconoPACKБренд InfineonCase/Package EconoPACKLead-Free Status Lead FreeMounting Style SolderКоличество штифтов 17
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- Case/Package: EconoPACK
- Lead-Free Status: Lead Free
- Mounting Style: Solder
- Количество штифтов: 17
- Number of Positions: 17
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -40 ℃
- Polarity: N-Channel
- Power Dissipation: 80 W
- Product Lifecycle Status: Obsolete
- REACH SVHC Compliance: No SVHC
- REACH SVHC Compliance Edition: 2015/12/17
- RoHS: RoHS Compliant
- Size-Height: 17 mm
- Size-Length: 107.5 mm
- Size-Width: 45.5 mm
- Transistor Gender: N Channel
INFINEON BSM10GD120DN2 IGBT Array & Module Transistor, N Channel, 15A, 3.2V, 80W, 1.2kV, EconoPACK
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