DTC115ECAHZGT116
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MPN DTC115ECAHZGT116Описание NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)Бренд ROHM SemiconductorCase/Package SOT-23-3Gain Bandwidth 250 MHzhFE Min 82Input Power (Max) 350 mW
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- Case/Package: SOT-23-3
- Gain Bandwidth: 250 MHz
- hFE Min: 82
- Input Power (Max): 350 mW
- Mounting Style: Surface Mount
- Количество штифтов: 3
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Output Voltage: 100 mV
- Упаковка: Tape & Reel (TR)
- Power Dissipation: 200 mW
- Power Dissipation (Max): 350 mW
- Power Rating: 0.2 W
- Product Lifecycle Status: Active
- RoHS: RoHS Compliant
- Transistor Gender: NPN
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
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