ES6U3T2CR
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MPN ES6U3T2CRОписание Trans MOSFET N-CH 30V ±1.4A 6Pin SOT-563T T/RБренд ROHM SemiconductorBreakdown Voltage (Drain to Source) 30 VCase/Package SOT-563-6Drain to Source Resistance (on) (Rds) 170 mΩFall Time 8 ns
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- Breakdown Voltage (Drain to Source): 30 V
- Case/Package: SOT-563-6
- Drain to Source Resistance (on) (Rds): 170 mΩ
- Fall Time: 8 ns
- Input Capacitance (Ciss): 70pF @10V(Vds)
- Mounting Style: Surface Mount
- Number of Channels: 1
- Количество штифтов: 6
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Упаковка: Tape & Reel (TR)
- Power Dissipation: 800 mW
- Power Dissipation (Max): 700mW (Ta)
- Product Lifecycle Status: Discontinued at Digi-Key
- Rise Time: 6 ns
- RoHS: RoHS Compliant
- Threshold Voltage: 1 V
Trans MOSFET N-CH 30V ±1.4A 6Pin SOT-563T T/R
Менеджер
Артём