FS150R07N3E4
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MPN FS150R07N3E4Описание Trans IGBT Module N-CH 650V 150A 430000mW 35Pin TrayБренд InfineonBreakdown Voltage (Collector to Emitter) 650 VCase/Package AG-ECONO3-4Input Capacitance (Cies) 9.3nF @25VInput Power (Max) 430 W
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- Breakdown Voltage (Collector to Emitter): 650 V
- Case/Package: AG-ECONO3-4
- Input Capacitance (Cies): 9.3nF @25V
- Input Power (Max): 430 W
- Lead-Free Status: Lead Free
- Mounting Style: Screw
- Количество штифтов: 35
- Operating Temperature: -40℃ ~ 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): 40 ℃
- Упаковка: Bulk
- Power Dissipation: 430 W
- Power Rating: 430 W
- Product Lifecycle Status: Active
- RoHS: RoHS Compliant
Trans IGBT Module N-CH 650V 150A 430000mW 35Pin Tray
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