HN4A51JTE85LF
-
-
-
MPN HN4A51JTE85LFОписание Trans GP BJT PNP 120V 0.1A 5Pin SMV T/RБренд ToshibaBreakdown Voltage (Collector to Emitter) 120 VCase/Package SOT-753hFE Max 700hFE Min 200 @2mA, 6V
-
-
- Breakdown Voltage (Collector to Emitter): 120 V
- Case/Package: SOT-753
- hFE Max: 700
- hFE Min: 200 @2mA, 6V
- Input Power (Max): 300 mW
- Lead-Free Status: Lead Free
- Mounting Style: Surface Mount
- Количество штифтов: 5
- Operating Temperature: 150℃ (TJ)
- Упаковка: Tape & Reel (TR)
- Product Lifecycle Status: Active
- RoHS: RoHS Compliant
Trans GP BJT PNP 120V 0.1A 5Pin SMV T/R
Менеджер
Артём