IKW30N65EL5XKSA1
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MPN IKW30N65EL5XKSA1Описание Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.Бренд InfineonBreakdown Voltage (Collector to Emitter) 650 VCase/Package TO-247-3ECCN Code EAR99Input Power (Max) 227 W
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- Breakdown Voltage (Collector to Emitter): 650 V
- Case/Package: TO-247-3
- ECCN Code: EAR99
- Input Power (Max): 227 W
- Lead-Free Status: Lead Free
- Mounting Style: Through Hole
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature: -40℃ ~ 175℃ (TJ)
- Operating Temperature (Max): 175 ℃
- Operating Temperature (Min): -40 ℃
- Упаковка: Tube
- Power Dissipation: 227 W
- Power Dissipation (Max): 227000 mW
- Product Lifecycle Status: Active
- Reverse recovery time: 100 ns
- RoHS: RoHS Compliant
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
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