IRG4BC30W-SPBF
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MPN IRG4BC30W-SPBFОписание Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(2+Tab) D2PAK TubeБренд InfineonBreakdown Voltage (Collector to Emitter) 600 VCase/Package TO-263-3ECCN Code EAR99Input Power (Max) 100 W
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- Breakdown Voltage (Collector to Emitter): 600 V
- Case/Package: TO-263-3
- ECCN Code: EAR99
- Input Power (Max): 100 W
- Lead-Free Status: Lead Free
- Mounting Style: Surface Mount
- Количество штифтов: 3
- Operating Temperature: -55℃ ~ 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Упаковка: Tube
- Power Dissipation: 100000 mW
- Power Dissipation (Max): 100 W
- Power Rating: 100 W
- Product Lifecycle Status: Not Recommended for New Designs
- RoHS: Compliant with Exemption
- Size-Height: 4.83 mm
- Size-Length: 10.67 mm
- Size-Width: 9.65 mm
Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(2+Tab) D2PAK Tube
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