IRGP35B60PDPBF
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MPN IRGP35B60PDPBFОписание Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC TubeБренд InfineonRoHS RoHS CompliantLead-Free Status Lead FreeProduct Lifecycle Status ActiveУпаковка Bulk
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- RoHS: RoHS Compliant
- Lead-Free Status: Lead Free
- Product Lifecycle Status: Active
- Упаковка: Bulk
- Mounting Style: Through Hole
- Size-Length: 15.9 mm
- Количество штифтов: 3
- Size-Width: 5.3 mm
- Size-Height: 20.3 mm
- Case/Package: TO-247-3
- Power Rating: 308 W
- Operating Temperature: -55℃ ~ 150℃ (TJ)
- Number of Positions: 3
- Polarity: N-Channel
- Power Dissipation: 308 W
- Rise Time: 6.00 ns
- Breakdown Voltage (Collector to Emitter): 600 V
- Reverse recovery time: 42 ns
- ECCN Code: EAR99
- Input Power (Max): 308 W
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Power Dissipation (Max): 308000 mW
- REACH SVHC Compliance Edition: 2015/12/17
Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC Tube
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