IRS2003STRPBF
-
-
-
MPN IRS2003STRPBFОписание MOSFET DRVR 200V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/RБренд InfineonCase/Package SOIC-8ECCN Code EAR99Fall Time 35 nsFall Time (Max) 90 nsDatasheet IRS2003STRPBF
-
-
- Case/Package: SOIC-8
- ECCN Code: EAR99
- Fall Time: 35 ns
- Fall Time (Max): 90 ns
- Fall Time (Max): 170 ns
- Lead-Free Status: Lead Free
- Mounting Style: Surface Mount
- Number of Outputs: 2
- Количество штифтов: 8
- Number of Positions: 8
- Operating Temperature: -40℃ ~ 150℃ (TJ)
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -40 ℃
- Operating Voltage: 10V ~ 20V
- Output Current: 290 mA
- Упаковка: Tape & Reel (TR)
- Power Dissipation: 625 mW
- Power Dissipation (Max): 625 mW
- Product Lifecycle Status: Active
- Quiescent Current: 270 µA
- Rise Time: 70 ns
- Rise/Fall Time: 70ns, 35ns
- RoHS: RoHS Compliant
- Size-Length: 5 mm
- Supply Voltage: 10V ~ 20V
- Supply Voltage (DC): 10.0V (min)
- Supply Voltage (Max): 20 V
- Supply Voltage (Min): 10 V
MOSFET DRVR 200V 0.6A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
Менеджер
Артём