L6387ED013TR
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MPN L6387ED013TRОписание MOSFET DRVR 600V 0.65A 2Out Hi/Lo Side Non-Inv 8Pin SO N T/RБренд ST MicroelectronicsCase/Package SOIC-8ECCN Code EAR99Fall Time 30 nsFall Time (Max) 30 nsDatasheet L6387ED013TR
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- Case/Package: SOIC-8
- ECCN Code: EAR99
- Fall Time: 30 ns
- Fall Time (Max): 30 ns
- Fall Time (Max): 50 ns
- Frequency: 0.4 MHz
- HK STC License: NLR
- Lead-Free Status: Lead Free
- Mounting Style: Surface Mount
- Number of Outputs: 2
- Количество штифтов: 8
- Number of Positions: 8
- Operating Temperature: -45℃ ~ 125℃ (TJ)
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -45 ℃
- Output Current: 650 mA
- Упаковка: Tape & Reel (TR)
- Power Dissipation: 750 mW
- Power Dissipation (Max): 750 mW
- Product Lifecycle Status: Active
- Rise Time: 50 ns
- Rise/Fall Time: 50ns, 30ns
- RoHS: RoHS Compliant
- Supply Voltage: 17 V
- Supply Voltage (Max): 17 V
MOSFET DRVR 600V 0.65A 2Out Hi/Lo Side Non-Inv 8Pin SO N T/R
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