NTE451
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MPN NTE451Описание NTE ELECTRONICS NTE451 JFET Transistor, Junction Field Effect, -25V, 4mA, 20mA, -4V, TO-92, JFETБренд NTE ElectronicsBreakdown Voltage (Gate to Source) -25.0 V (min)Case/Package TO-92Drain to Source Voltage (Vds) 25 VHTS Code 85412100959Datasheet NTE451
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- Breakdown Voltage (Gate to Source): -25.0 V (min)
- Case/Package: TO-92
- Drain to Source Voltage (Vds): 25 V
- HTS Code: 85412100959
- Input Capacitance: 5 pF
- Material: Silicon
- Mounting Style: Through Hole
- Количество штифтов: 3
- Operating Temperature: -65℃ ~ 150℃
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -65 ℃
- Power Dissipation: 350 mW
- Power Dissipation (Max): 350 mW
- Product Lifecycle Status: Obsolete
- REACH SVHC Compliance Edition: 2014/12/17
- RoHS: RoHS Compliant
- Size-Height: 5.33 mm
NTE ELECTRONICS NTE451 JFET Transistor, Junction Field Effect, -25V, 4mA, 20mA, -4V, TO-92, JFET
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