OP800B
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MPN OP800BОписание Phototransistor Chip Silicon 890nm 3Pin TO-18Бренд TT Electronics/Optek TechnologyBreakdown Voltage (Collector to Emitter) 30 VCase/Package TO-18-3ECCN Code EAR99Fall Time 7 µsDatasheet OP800B
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- Breakdown Voltage (Collector to Emitter): 30 V
- Case/Package: TO-18-3
- ECCN Code: EAR99
- Fall Time: 7 µs
- Fall Time (Max): 7000 ns
- Fall Time (Max): 7000 ns
- Input Power (Max): 250 mW
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Количество штифтов: 3
- Operating Temperature: -65℃ ~ 125℃ (TA)
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -65 ℃
- Упаковка: Bulk
- Peak Wavelength: 890 nm
- Power Dissipation: 250 mW
- Power Dissipation (Max): 250 mW
- Product Lifecycle Status: Active
- RoHS: RoHS Compliant
- Size-Height: 7.61 mm
- Size-Length: 4.75 mm
- Size-Width: 4.75 mm
- Wavelength: 890 nm
Phototransistor Chip Silicon 890nm 3Pin TO-18
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