OP801WSL
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MPN OP801WSLОписание OP801 Series 890nm ±40° 50mA 150mW NPN Silicon Phototransistor - TO-18Бренд TT Electronics/Optek TechnologyBreakdown Voltage (Collector to Emitter) 30 VCase/Package TO-18-2Fall Time 7 µsFall Time (Max) 7000 ns
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- Breakdown Voltage (Collector to Emitter): 30 V
- Case/Package: TO-18-2
- Fall Time: 7 µs
- Fall Time (Max): 7000 ns
- Fall Time (Max): 7000 ns
- Input Power (Max): 250 mW
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Количество штифтов: 3
- Operating Temperature: -65℃ ~ 125℃ (TA)
- Operating Temperature (Max): 125 ℃
- Operating Temperature (Min): -65 ℃
- Упаковка: Bulk
- Polarity: NPN
- Power Consumption: 250 mW
- Power Dissipation: 250 mW
- Power Dissipation (Max): 250 mW
- Product Lifecycle Status: Active
- Rise Time: 7.00 µs
- RoHS: RoHS Compliant
- Size-Height: 5.13 mm
- Viewing Angle: 75°
- Wavelength: 890 nm
OP801 Series 890nm ±40° 50mA 150mW NPN Silicon Phototransistor - TO-18
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