OPB100-EZ
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MPN OPB100-EZОписание Photodetector Transistors Infrared 890nm EmitterБренд TT Electronics/Optek TechnologyBreakdown Voltage (Collector to Emitter) 30 VCase/Package TO-46ECCN Code ECL99Fall Time 200 nsDatasheet OPB100-EZ
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- Breakdown Voltage (Collector to Emitter): 30 V
- Case/Package: TO-46
- ECCN Code: ECL99
- Fall Time: 200 ns
- Forward Current: 100 mA
- Forward Current (Max): 100 mA
- Forward Voltage: 1.7 V
- Input Current: 20 mA
- Lead-Free Status: Lead Free
- Maximum Forward Voltage (Max): 1.7 V
- Mounting Style: Through Hole
- Количество штифтов: 2
- Operating Temperature: -40℃ ~ 85℃
- Operating Temperature (Max): 80 ℃
- Operating Temperature (Min): -40 ℃
- Output Voltage: 30.0 V
- Упаковка: Bulk
- Peak Wavelength: 880 nm
- Power Dissipation: 250 mW
- Power Dissipation (Max): 250 mW
- Power Rating: 142 mW
- Product Lifecycle Status: Active
- REACH SVHC Compliance Edition: 2015/06/15
- Reverse Breakdown Voltage: 2 V
- Rise Time: 500 ns
- RoHS: RoHS Compliant
- Viewing Angle: 25°
- Wavelength: 880 nm
Photodetector Transistors Infrared 890nm Emitter
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