QSE113
-
-
-
MPN QSE113Описание FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880nm, 25°, 0.1W(1/10W), 2Pins, Side LookingБренд FairchildBreakdown Voltage 30.0 VBreakdown Voltage (Collector to Emitter) 30 VCase/Package Side LookingECCN Code EAR99Datasheet QSE113
-
-
- Breakdown Voltage: 30.0 V
- Breakdown Voltage (Collector to Emitter): 30 V
- Case/Package: Side Looking
- ECCN Code: EAR99
- Fall Time: 8 µs
- Industrial-Spec: Yes
- Input Power (Max): 100 mW
- Lead Length: 12.7 mm
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Number of Channels: 1
- Количество штифтов: 2
- Number of Positions: 2
- Operating Temperature: -40℃ ~ 100℃
- Operating Temperature (Max): 100 ℃
- Operating Temperature (Min): -40 ℃
- Operating Voltage: 5.00 V
- Output Power: 100 mW
- Output Voltage: ≤30.0 V
- Упаковка: Bulk
- Peak Wavelength: 880 nm
- Polarity: NPN
- Power Consumption: 100 mW
- Power Dissipation: 100 mW
- Power Dissipation (Max): 100 mW
- Product Lifecycle Status: Active
- REACH SVHC Compliance: No SVHC
- REACH SVHC Compliance Edition: 2015/06/15
- Rise Time: 8 µs
- RoHS: RoHS Compliant
- Size-Height: 5.08 mm
- Size-Length: 4.44 mm
- Size-Width: 2.54 mm
- Supply Voltage (DC): 5.00 V
- Viewing Angle: 25°
- Voltage Rating (DC): 30.0 V
- Wavelength: 880 nm
FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880nm, 25°, 0.1W(1/10W), 2Pins, Side Looking
Менеджер
Артём