R5011ANX
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MPN R5011ANXОписание Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220FM BulkБренд ROHM SemiconductorBreakdown Voltage (Drain to Source) 500 VCase/Package TO-220-3Drain to Source Resistance (on) (Rds) 380 mΩDrain to Source Voltage (Vds) 500 V
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- Breakdown Voltage (Drain to Source): 500 V
- Case/Package: TO-220-3
- Drain to Source Resistance (on) (Rds): 380 mΩ
- Drain to Source Voltage (Vds): 500 V
- Fall Time: 30 ns
- Input Capacitance (Ciss): 1000pF @25V(Vds)
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Number of Channels: 1
- Количество штифтов: 3
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): 55 ℃
- Упаковка: Bulk
- Power Dissipation: 59 W
- Power Dissipation (Max): 50W (Tc)
- Product Lifecycle Status: Not Recommended for New Designs
- Rise Time: 28 ns
- RoHS: RoHS Compliant
- Threshold Voltage: 2.5 V
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220FM Bulk
Менеджер
Артём