RJH1CV7DPK-00#T0
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MPN RJH1CV7DPK-00#T0Описание Trans IGBT Chip N-CH 1200V 70A 320000mW 3Pin(3+Tab) TO-3P TubeБренд Renesas ElectronicsBreakdown Voltage (Collector to Emitter) 1200 VCase/Package TO-3-3Input Power (Max) 320 WLead-Free Status Lead Free
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- Breakdown Voltage (Collector to Emitter): 1200 V
- Case/Package: TO-3-3
- Input Power (Max): 320 W
- Lead-Free Status: Lead Free
- Mounting Style: Through Hole
- Количество штифтов: 3
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Упаковка: Tube
- Power Dissipation: 320000 mW
- Power Dissipation (Max): 320000 mW
- Product Lifecycle Status: Pre-Release
- Reverse recovery time: 200 ns
- RoHS: RoHS Compliant
Trans IGBT Chip N-CH 1200V 70A 320000mW 3Pin(3+Tab) TO-3P Tube
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