RPT-34PB3F
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MPN RPT-34PB3FОписание RPT-34PB3F Series 800nm 32V 30mA 120° Deg. Through Hole PhototransistorБренд ROHM SemiconductorBreakdown Voltage (Collector to Emitter) 32 VCase/Package T-1ECCN Code EAR99Fall Time 10 µsDatasheet RPT-34PB3F
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- Breakdown Voltage (Collector to Emitter): 32 V
- Case/Package: T-1
- ECCN Code: EAR99
- Fall Time: 10 µs
- Fall Time (Max): 10000 ns
- Fall Time (Max): 10000 ns
- Input Power (Max): 150 mW
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Through Hole
- Number of Channels: 1
- Количество штифтов: 2
- Number of Positions: 2
- Operating Temperature: -25℃ ~ 85℃ (TA)
- Operating Temperature (Max): 85 ℃
- Operating Temperature (Min): -25 ℃
- Output Power: 150 mW
- Упаковка: Bulk
- Peak Wavelength: 800 nm
- Power Dissipation: 150 mW
- Power Dissipation (Max): 150 mW
- Power Rating: 0.15 W
- Product Lifecycle Status: Active
- Rise Time: 10 µs
- RoHS: RoHS Compliant
- Size-Height: 5.2 mm
- Transistor Gender: NPN
- Viewing Angle: 72°
- Wavelength: 800 nm
RPT-34PB3F Series 800nm 32V 30mA 120° Deg. Through Hole Phototransistor
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