RW1E014SNT2R
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MPN RW1E014SNT2RОписание Trans MOSFET N-CH 30V 1.4A 6Pin WEMT T/RБренд ROHM SemiconductorBreakdown Voltage (Drain to Source) 30 VCase/Package SOT-563-6Drain to Source Resistance (on) (Rds) 170 mΩDrain to Source Voltage (Vds) 30 V
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- Breakdown Voltage (Drain to Source): 30 V
- Case/Package: SOT-563-6
- Drain to Source Resistance (on) (Rds): 170 mΩ
- Drain to Source Voltage (Vds): 30 V
- Fall Time: 8 ns
- Input Capacitance (Ciss): 70pF @10V(Vds)
- Input Power (Max): 700 mW
- Lead-Free Status: Lead Free
- Material: Silicon
- Mounting Style: Surface Mount
- Number of Channels: 1
- Количество штифтов: 6
- Number of Positions: 6
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): 55 ℃
- Упаковка: Tape & Reel (TR)
- Polarity: N-Channel
- Power Dissipation: 700 mW
- Power Dissipation (Max): 700mW (Ta)
- Product Lifecycle Status: Active
- Rise Time: 6 ns
- RoHS: RoHS Compliant
- Threshold Voltage: 1 V
- Transistor Gender: N Channel
Trans MOSFET N-CH 30V 1.4A 6Pin WEMT T/R
Менеджер
Артём