SQP10250E_GE3
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MPN SQP10250E_GE3Описание Trans MOSFET N-CH 250V 53A Automotive 3-Pin(3+Tab) TO-220ABБренд VISHAYCase/Package TO-220Drain to Source Resistance (on) (Rds) 0.0244 ΩDrain to Source Voltage (Vds) 250 VFall Time 10 nsDatasheet SQP10250E_GE3
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- Case/Package: TO-220
- Drain to Source Resistance (on) (Rds): 0.0244 Ω
- Drain to Source Voltage (Vds): 250 V
- Fall Time: 10 ns
- Input Capacitance (Ciss): 2880pF @25V(Vds)
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature (Max): 175 ℃
- Operating Temperature (Min): -55 ℃
- Power Dissipation: 250 W
- Power Dissipation (Max): 250000 mW
- Rise Time: 6 ns
- RoHS: Compliant with Exemption
- Threshold Voltage: 3 V
- Transistor Gender: N Channel
Trans MOSFET N-CH 250V 53A Automotive 3-Pin(3+Tab) TO-220AB
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