SST2222AHZGT116
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MPN SST2222AHZGT116Описание Transistor, Aec-Q101, Npn, 40V, Sot-23Бренд ROHM SemiconductorAutomative-Spec YesBreakdown Voltage (Collector to Emitter) 40 VCase/Package SOT-23-3DC Current Gain (hFE) 40
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- Automative-Spec: Yes
- Breakdown Voltage (Collector to Emitter): 40 V
- Case/Package: SOT-23-3
- DC Current Gain (hFE): 40
- hFE Max: 300
- hFE Min: 100 @150mA, 10V
- Input Power (Max): 200 mW
- Mounting Style: Surface Mount
- Количество штифтов: 3
- Number of Positions: 3
- Operating Temperature: 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Упаковка: Tape & Reel (TR)
- Power Dissipation: 200 mW
- Power Dissipation (Max): 200 mW
- Power Rating: 0.2 W
- Product Lifecycle Status: Active
- RoHS: RoHS Compliant
- Transistor Gender: NPN
Transistor, Aec-Q101, Npn, 40V, Sot-23
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