STB11NM60FDT4
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MPN STB11NM60FDT4Описание N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)Бренд ST MicroelectronicsBreakdown Voltage (Drain to Source) 600 VBreakdown Voltage (Gate to Source) ±30.0 VCase/Package TO-263-3Continuous Drain Current (Ids) 11.0 A
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- Breakdown Voltage (Drain to Source): 600 V
- Breakdown Voltage (Gate to Source): ±30.0 V
- Case/Package: TO-263-3
- Continuous Drain Current (Ids): 11.0 A
- Current Rating: 11.0 A
- Drain to Source Resistance (on) (Rds): 450 mΩ
- Drain to Source Voltage (Vds): 600 V
- Fall Time: 15 ns
- Input Capacitance (Ciss): 900pF @25V(Vds)
- Input Power (Max): 160 W
- Lead-Free Status: Lead Free
- Mounting Style: Surface Mount
- Количество штифтов: 3
- Operating Temperature: -65℃ ~ 150℃
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -65 ℃
- Упаковка: Tape & Reel (TR)
- Polarity: N-Channel
- Power Dissipation: 160 W
- Power Dissipation (Max): 160W (Tc)
- Product Lifecycle Status: Active
- Rise Time: 16 ns
- RoHS: RoHS Compliant
- Voltage Rating (DC): 600 V
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
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