STGF19NC60WD
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MPN STGF19NC60WDОписание Trans IGBT Chip N-CH 600V 14A 32000mW 3Pin(3+Tab) TO-220FP TubeБренд ST MicroelectronicsBreakdown Voltage (Collector to Emitter) 600 VCase/Package TO-220-3Input Power (Max) 32 WLead-Free Status Lead Free
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- Breakdown Voltage (Collector to Emitter): 600 V
- Case/Package: TO-220-3
- Input Power (Max): 32 W
- Lead-Free Status: Lead Free
- Mounting Style: Through Hole
- Количество штифтов: 3
- Operating Temperature: -55℃ ~ 150℃ (TJ)
- Operating Temperature (Max): 150 ℃
- Operating Temperature (Min): -55 ℃
- Упаковка: Tube
- Polarity: N-Channel
- Power Dissipation: 32000 mW
- Power Dissipation (Max): 32000 mW
- Product Lifecycle Status: Not Recommended for New Designs
- REACH SVHC Compliance: No SVHC
- Reverse recovery time: 31 ns
- Rise Time: 7.00 ns
- RoHS: RoHS Compliant
- Size-Height: 16.4 mm
Trans IGBT Chip N-CH 600V 14A 32000mW 3Pin(3+Tab) TO-220FP Tube
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