STGP20M65DF2
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MPN STGP20M65DF2Описание Trans IGBT Chip N-CH 650V 40A 166000mW 3Pin(3+Tab) TO-220AB TubeБренд ST MicroelectronicsRoHS Compliant with ExemptionProduct Lifecycle Status ActiveУпаковка TubeMounting Style Through Hole
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- RoHS: Compliant with Exemption
- Product Lifecycle Status: Active
- Упаковка: Tube
- Mounting Style: Through Hole
- Количество штифтов: 3
- Case/Package: TO-220-3
- Operating Temperature: -55℃ ~ 175℃ (TJ)
- Power Dissipation: 166000 mW
- Breakdown Voltage (Collector to Emitter): 650 V
- Reverse recovery time: 166 ns
- ECCN Code: EAR99
- Input Power (Max): 166 W
- Operating Temperature (Max): 175 ℃
- Operating Temperature (Min): -55 ℃
- Power Dissipation (Max): 166000 mW
Trans IGBT Chip N-CH 650V 40A 166000mW 3Pin(3+Tab) TO-220AB Tube
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